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| SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR ISSSUE 1 - DECEMBER 1998 FEATURES FCX718 C * * * * * 2W POWER DISSIPATION 6A Peak Pulse Current Excellent HFE Characteristics up to 6Amps Extremely Low Saturation Voltage E.g. 16mv Typ. Extremely Low Equivalent On-resistance; RCE(sat) 96m at 2.5A E C B Partmarking Detail - 718 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current ** Continuous Collector Current Base Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg VALUE -20 -20 -5 -6 -2.5 -500 1 2 -55 to +150 UNIT V V V A A mA W W C recommended Ptot calculated using FR4 measuring 15x15x0.6mm Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for these devices Refer to the handling instructions for soldering surface mount components. FCX718 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) -16 -130 -145 -0.98 -0.85 300 300 150 35 15 150 475 450 230 70 30 180 21 40 670 30 MHz pF ns ns MIN. -20 -20 -5 TYP. -65 -55 -8.8 -100 -100 -100 -40 -200 -220 -300 -1.1 -0.95 MAX. UNIT V V V nA nA nA mV mV mV mV V V CONDITIONS. IC=-100A IC=-10mA* IE=-100A VCB=-15V VEB=-4V VCES=-15V IC=-0.1A, IB=-10mA* IC=-1A, IB=-20mA* IC=-1.5A, IB=-50mA* IC=-2.5A, IB=-200mA* IC=-2.5A, IB=-200mA* IC=-2.5A, VCE=-2V* IC=-10mA, VCE=-2V* IC=-0.1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-4A, VCE=-2V* IC=-6A, VCE=-2V* IC=-50mA, VCE=-10V f=100MHz VCB=-10V, f=1MHz VCC=-15V, IC=-0.75A IB1=IB2=15mA Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio VBE(sat) VBE(on) hFE Transition Frequency Output Capacitance Turn-On Time Turn-Off Time fT Cobo t(on) t(off) *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% FCX718 TYPICAL CHARACTERISTICS 0.8 +25C 0.8 IC/IB=50 0.6 0.6 -55C +25C +100C +150C 0.4 IC/IB=10 IC/IB=50 IC/IB=100 0.4 0.2 0.2 0 1m 10m 100m 1 10 0 1m 10m 100m 1 10 IC - Collector Current (A) IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 900 VCE=2V IC/IB=50 0.8 750 +100C 600 450 300 -55C +25C 0.6 04 -55C +25C +100C +150C 0.2 150 0 1m 0 10m 100m 1 10 1m 10m 100m 1 10 IC - Collector Current (A) IC - Collector Current (A) hFE v IC VBE(sat) v IC 1.0 0.8 0.6 0.4 0.2 0 1m 10m 100m 1 10 -55C +25C +100C +150C 10 1 DC 1s 100ms 10ms 1ms 100s 0.1 0.01 100m 1 10 100 IC - Collector Current (A) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area |
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